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| 2003. 10. 28 1/2 semiconductor technical data KDS221V silicon epitaxial planar diode revision no : 0 ultra high speed switching application. features low forward voltage : v f =1.0v (max.). small package : vsm. maximum rating (ta=25 ) dim millimeters a b d e vsm 1.2 0.05 0.8 0.05 0.5 0.05 0.3 0.05 1.2 0.05 0.8 0.05 0.40 0.12 0.05 c g h j k 0.2 0.05 b e d g a h k c j 2 3 1 p p p 5 1. cathode 1 2. anode 2 3. anode 1 / cathode 2 + _ + _ + _ + _ + _ + _ + _ + _ 3 2 1 electrical characteristics (ta=25 ) marking ds characteristic symbol rating unit maximum (peak) reverse voltage v rm 20 v reverse voltage v r 20 v maximum (peak) forward current i fm 200 * ma average forward current i o 100 * ma surge current (1 s) i fsm 300 * ma power dissipation p d 100 mw junction temperature t j 150 storage temperature range t stg -55 150 note : * unit rating. total rating=unit rating x 0.7 characteristic symbol test condition min. typ. max. unit forward voltage v f i f =10ma - - 1.0 v reverse current i r v r =15v - - 0.1 a www..net
2003. 10. 28 2/2 KDS221V revision no : 0 3 0.5 reverse voltage v (v) r r t c - v forward current i (ma) f 0.01 0 forward voltage v (v) f total capacitance c (pf) 0.5 i - v ff 0.4 0.8 1.2 1.6 2.0 2.4 0.1 1 10 100 d1+d2 d1 d1 d1 d1 d2 d2 d2 d2 t 1 3 5 10 10 30 f=1mhz (d1+d2) (d1) (d2) 1 ta=125 c ta=75 c ta=25 c ta=-25 c t a =1 25 c ta=75 c ta=25 c ta=-25 c reverse current i (na) r 0.01 0 reverse voltage v (v) r i - v rr 51015 0.1 1 10 100 ta=125 c ta=125 c ta=100 c ta=100 c ta=75 c ta=75 c forward current i (ma) f 0.01 0 forward voltage v (v) f i - v ff 0.4 0.8 1.2 1.6 0.1 1 10 100 ta=125 c ta =75 c ta=25 c ta=-25 c |
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